Clustering induced suppression of ferromagnetism in diluted magnets

Ferromagnetism in diluted magnets in the compensated regime p << x is shown to be suppressed by the formation of impurity spin clusters. The majority bulk spin couplings are shown to be considerably weakened by the preferential accumulation of holes in spin clusters, resulting in low-energy magnon softening and enhanced low-temperature decay of magnetic order. A locally self-consistent magnon renormalization analysis of spin dynamics shows that although strong intra-cluster correlations tend to prolong global order, T_c is still reduced compared to the ordered case.Comment: published version, 5 pages, 4 figure

The Influence of Magnetic Domain Walls on Longitudinal and Transverse Magnetoresistance in Tensile Strained (Ga,Mn)As Epilayers

We present a theoretical analysis of recent experimental measurements of magnetoresistance in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. The model reproduces the field-antisymmetric anomalies observed in the longitudinal magnetoresistance in the planar geometry (magnetic field in the epilayer plane and parallel to the current density), as well as the unusual shape of the accompanying transverse magnetoresistance. The magnetoresistance characteristics are attributed to circulating currents created by the presence of magnetic domain walls

Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures

A fourteen-fold anisotropy in the spin transport efficiency parallel and perpendicular to the charge transport is observed in a vertically-biased (Ga,Mn)As-based spin-polarized light emitting diode. The spin polarization is determined by measuring the polarization of electroluminescence from an (In,Ga)As quantum well placed a distance d (20 to 420 nm) below the p-type ferromagnetic (Ga,Mn)As contact. In addition, a monotonic increase from 0.5 to 7% in the polarization is measured as d decreases for collection parallel to the growth direction, while the in-plane polarization from the perpendicular direction (~0.5%) remains unchanged.Comment: 11 pages, 3 figures, to be published, Applied Physics Letters, March 11, 200

Velocity of domain-wall motion induced by electrical current in a ferromagnetic semiconductor (Ga,Mn)As

Current-induced domain-wall motion with velocity spanning over five orders of magnitude up to 22 m/s has been observed by magneto-optical Kerr effect in (Ga,Mn)As with perpendicular magnetic anisotropy. The data are employed to verify theories of spin-transfer by the Slonczewski-like mechanism as well as by the torque resulting from spin-flip transitions in the domain-wall region. Evidence for domain-wall creep at low currents is found.Comment: 5 pages, 3 figure

Light and electric field control of ferromagnetism in magnetic quantum structures

A strong influence of illumination and electric bias on the Curie temperature and saturation value of the magnetization is demonstrated for semiconductor structures containing a modulation-doped p-type Cd0.96Mn0.04Te quantum well placed in various built-in electric fields. It is shown that both light beam and bias voltage generate an isothermal and reversible cross-over between the paramagnetic and ferromagnetic phases, in the way that is predetermined by the structure design. The observed behavior is in quantitative agreement with the expectations for systems, in which ferromagnetic interactions are mediated by the weakly disordered two-dimensional hole liquid.Comment: 4 pages and 3 figure

Integral Transforms for Conformal Field Theories with a Boundary

A new method is developed for solving the conformally invariant integrals that arise in conformal field theories with a boundary. The presence of a boundary makes previous techniques for theories without a boundary less suitable. The method makes essential use of an invertible integral transform, related to the radon transform, involving integration over planes parallel to the boundary. For successful application of this method several nontrivial hypergeometric function relations are also derived.Comment: 20 pagess, LateX fil

A Gate-Induced Switch in Zigzag Graphene Naoribbons and Charging Effects

Using non-equilibrium Green's function formalism, we investigate nonlinear transport and charging effects of gated graphene nanoribbons (GNRs) with even number of zigzag chains. We find a negative differential resistance (NDR) over a wide range of gate voltages with on/off ratio $\sim 10^6$ for narrow enough ribbons. This NDR originates from the parity selection rule and also prohibition of transport between discontinues energy bands. Since the external field is well screened close to the contacts, the NDR is robust against the electrostatic potential. However, for voltages higher than the NDR threshold, due to charge transfer through the edges of ZGNR, screening is reduced such that the external potential can penetrate inside the ribbon giving rise to smaller values of off current. Furthermore, on/off ratio of the current depends on the aspect ratio of the length/width and also edge impurity. Moreover, on/off ratio displays a power law behavior as a function of ribbon length.Comment: 8 pages, 9 figure

Quantum Dot as Spin Filter and Spin Memory

We consider a quantum dot in the Coulomb blockade regime weakly coupled to current leads and show that in the presence of a magnetic field the dot acts as an efficient spin-filter (at the single-spin level) which produces a spin-polarized current. Conversely, if the leads are fully spin-polarized the up or down state of the spin on the dot results in a large sequential or small cotunneling current, and thus, together with ESR techniques, the setup can be operated as a single-spin memory.Comment: 4 pages, 3 figures, REVTe